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QIN Yonghua, SHI Qiang, SHI Donggu. Development of a New Type of Cable Outer Semiconductive Layer Chamfering Device[J]. RURAL ELECTRIFICATION, 2024, (4): 75-76. DOI: 10.13882/j.cnki.ncdqh.2024.04.020
Citation: QIN Yonghua, SHI Qiang, SHI Donggu. Development of a New Type of Cable Outer Semiconductive Layer Chamfering Device[J]. RURAL ELECTRIFICATION, 2024, (4): 75-76. DOI: 10.13882/j.cnki.ncdqh.2024.04.020

Development of a New Type of Cable Outer Semiconductive Layer Chamfering Device

  • When peeling off the outer semi-conductive shielding layer, the fracture of the outer semi-conductive shielding layer and the chamfer of the insulation layer in the production and construction of distribution cable accessories, the constructors generally rely on their feelings and experiences, and it is difficult to control the depth and stability of cutting, which can not guarantee the smoothness and smoothness of the cable fracture and chamfer, and can't closely overlap with the cold shrinkage main body (stress cone), which is easy to cause tip discharge effect and leave serious potential safety hazards. The purpose of this study is to develop a three-in-one special cutter for cutting the outer semi-conductive shield, cutting the outer semi-conductive shield and chamfering the outer semi-conductive shield and insulating layer. This study can significantly improve the smoothness and flatness of the cable fracture and chamfer, improve the work efficiency and reduce the hidden danger of cable head insulation damage.
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